Mfr Part #:

BSD316SN

Mfr Name: VBsemi

The BSD316SN is an N-channel OptiMOS™2 small-signal MOSFET from VBsemi. It offers a 30V drain-source breakdown voltage and is rated for logic-level gate drive.

✓ Total Stock: 27,585 pcs

$ Price Range: $2.40

BSD316SN Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	27,585 pcs On Request	27585 pcs	On Request	1	On Request	On Request	19+	On Request	On Request

BSD316SN Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	VBsemi
Halogen Free	Halogen-free
Mounting Type	Surface Mount
Power Dissipation	0.5 W
Reverse Recovery Time	9.1 ns
Tape & Reel	3000 pcs/ reel

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BSD316SN Description

Short technical summary and product information.

The BSD316SN is an N-channel enhancement mode MOSFET from VBsemi, part of the OptiMOS™2 family. It is designed for small-signal applications and features a 30V drain-source breakdown voltage (V(BR)DSS) and a gate threshold voltage (VGS(th)) typically around 1.6V, making it suitable for logic-level gate drive applications (4.5V rated).

Key electrical characteristics include a maximum continuous drain current (ID) of 1.4A at 25°C ambient temperature and a typical on-state resistance (RDS(on)) of 192mΩ at VGS=4.5V and ID=1.1A. It also boasts a typical transconductance (gfs) of 2.3S.

This MOSFET is avalanche rated and qualified according to AEC Q101 standards. It is packaged in a PG-SOT363 surface-mount package and is supplied on tape and reel with 3000 pieces per reel. The operating and storage temperature range is -55°C to 150°C.

Environmental compliance includes 100% lead-free and halogen-free status. It is also RoHS3 compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1.

BSD316SN Quick Information

Product Type: MOSFET

Series: BSD316

Canonical Name: BSD316SN N-channel OptiMOS™2 Small-Signal-Transistor

Subcategory: Single

BSD316SN Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: 100% lead-free

BSD316SN Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSD316SN Features

N-channel enhancement mode MOSFET.
Logic level gate drive capability (4.5V rated).
30V drain-source breakdown voltage.
Low on-state resistance (192mΩ typical @ 4.5V VGS).
AEC Q101 qualified for reliability.

BSD316SN Applications

Ideal for low-voltage switching circuits.
Suitable for battery-powered devices.
Used in power management applications.
Component in control circuitry.

BSD316SN FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the BSD316SN?

The drain-source breakdown voltage (V(BR)DSS) is 30V.

What is the typical gate threshold voltage for the BSD316SN MOSFET?

The typical gate threshold voltage (VGS(th)) is 1.6V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (ID) at 25°C is 1.4A.

What is the typical on-state resistance at 4.5V gate-source voltage?

The typical drain-source on-state resistance (RDS(on)) at VGS=4.5V and ID=1.1A is 192mΩ.

What package type is the BSD316SN MOSFET supplied in?

The BSD316SN is supplied in a PG-SOT363 package.

Is the BSD316SN RoHS compliant?

Yes, the BSD316SN is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.