BSC900N20NS3GATMA1 N-Channel MOSFET from Infineon's OptiMOS3 series, rated for 200V drain-source voltage and 15.2A continuous drain current. Features low on-resistance of 90mOhm max and is housed in a PG-TDSON-8 surface-mount package.
Mfr Part #:

BSC900N20NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon's OptiMOS3 series, rated for 200V drain-source voltage and 15.2A continuous drain current. Features low on-resistance of 90mOhm max and is housed in a PG-TDSON-8 surface-mount package.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.75 - $2.70

BSC900N20NS3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC900N20NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC900N20NS3GATMA1 Description

Short technical summary and product information.

The BSC900N20NS3GATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS3 family. It is designed for dc-dc conversion applications and offers a drain-source voltage rating of 200V and continuous drain current of 15.2A at 25°C. The device features a maximum on-resistance of 90mOhm at Vgs=10V, with a typical value of 77mOhm. Gate charge is typically 9nC, enabling efficient switching. The MOSFET is capable of handling pulsed drain currents up to 61A and has an avalanche energy rating of 100mJ. It is housed in a PG-TDSON-8 surface-mount package (8-PowerTDFN) with supplier package designation PG-TDSON-8-5. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 62.5W at case temperature 25°C. It is qualified according to JEDEC standards and is halogen-free per IEC61249-2-21, with Pb-free lead plating. The MOSFET is RoHS compliant and REACH unaffected. Typical switching times include turn-on delay of 5ns, rise time of 4ns, turn-off delay of 10ns, and fall time of 3ns. The integrated body diode has a forward voltage of 1V typical and reverse recovery time of 86ns. This MOSFET is suitable for high-efficiency power conversion in applications such as synchronous rectification, dc-dc converters, and motor control.

BSC900N20NS3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSC900N20NS3GATMA1 N-Channel MOSFET, 200V, 15.2A, TDSON-8
Subcategory: Single MOSFET

BSC900N20NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC900N20NS3GATMA1 Estimated Pricing

Qty Low High
1+ $2.70 $2.70
10+ $1.74 $1.74
50+ $1.32 $1.32
100+ $1.19 $1.19
500+ $0.95 $0.95
5,000+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC900N20NS3GATMA1 Features

  • N-channel enhancement mode power MOSFET.
  • Rated for 200V drain-source voltage.
  • Continuous drain current up to 15.2A.
  • Low on-resistance of 90mOhm max.
  • Surface-mount PG-TDSON-8 package.

BSC900N20NS3GATMA1 Applications

  • Ideal for dc-dc converter circuits.
  • Used in synchronous rectification designs.
  • Suitable for motor control applications.
  • Power management in industrial systems.

BSC900N20NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

200V maximum.

What package is the BSC900N20NS3GATMA1 available in?

PG-TDSON-8 (8-PowerTDFN) surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BSC900N20NS3GATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free per IEC61249-2-21.

What is the maximum drain current?

15.2A continuous at 25°C, 10.7A at 100°C, and 61A pulsed.

What is the on-resistance?

Maximum 90mOhm at Vgs=10V, Id=7.6A; typical 77mOhm.

What is the gate threshold voltage?

Minimum 2V, typical 3V, maximum 4V at Id=30µA.

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