| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,389 pcs
|
8389 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
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| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The Infineon Technologies BSC900N20NS3G is an N-Channel MOSFET belonging to the OptiMOS™ series. This component is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 15.2A at 25°C. The on-resistance (Rds(on)) is specified as a maximum of 90mOhm at 7.6A and 10V gate-source voltage. It also features a gate charge (Qg) of 11.6nC maximum at 10V and an input capacitance (Ciss) of 920pF maximum at 100V.
The MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 62.5W. The gate-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) maximum of 4V at 30µA.
This device is housed in an 8-PowerTDFN package and is designed for surface mounting. The supplier device package is identified as PG-TDSON-8-5.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the BSC900N20NS3G is 200V.
The continuous drain current (Id) at 25°C is 15.2A.
The maximum on-resistance (Rds(on)) is 90mOhm at 7.6A and 10V.
The operating temperature range is -55°C to 150°C.
The BSC900N20NS3G is an N-Channel MOSFET.
The BSC900N20NS3G is supplied in an 8-PowerTDFN package.
The BSC900N20NS3G is designed for surface mounting.