| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
2,110 pcs
|
2110 pcs | On Request | 1 | On Request | On Request | 1102+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC889N03MSG is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for low-voltage power switching applications requiring high efficiency and compact size.
Key electrical specifications include a maximum drain-source voltage of 30 V, continuous drain current of 12 A at ambient temperature (44 A at case temperature), and a low drain-source on-resistance of 9.1 mOhm at 30 A gate drive of 10 V. The gate threshold voltage is 2 V maximum at 250 µA. The device features a gate charge of 20 nC at 10 V and input capacitance of 1500 pF at 15 V.
The MOSFET is housed in an 8-PowerTDFN surface mount package (PG-TSDSON-8 supplier package) and supports an operating junction temperature range of -55°C to 150°C. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 787+ | $0.38 | $0.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-PowerTDFN (PG-TSDSON-8).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
2 V maximum at 250 µA.
1500 pF at 15 V.
44 A at Tc.