| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC889N03LSG is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It features a drain-source breakdown voltage of 30V and supports continuous drain currents of 13A at 25°C ambient temperature (Ta) and 45A at 25°C case temperature (Tc). The device offers a low maximum on-resistance of 9mOhm at 30A drain current and 10V gate drive, and 4.5V/10V recommended gate drive voltages.
Gate charge is 16nC maximum at 10V, and input capacitance is 1300pF maximum at 15V drain-source voltage. The gate threshold voltage is a maximum of 2.2V at 250µA drain current, and the maximum gate-source voltage is ±20V. Power dissipation is rated at 2.5W (Ta) and 28W (Tc). The operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a surface mount 8-PowerTDFN package with a PG-TDSON-8 supplier device package. It is designed for applications requiring efficient power switching with low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1,039+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
Surface mount 8-PowerTDFN package (PG-TDSON-8).
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
9mOhm maximum at 30A drain current and 10V gate drive.
16nC maximum at 10V gate voltage.
1300pF maximum at 15V drain-source voltage.