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BSC886N03LSG E8178 Infineon BSC886N03LSG E8178 is a single N-Channel enhancement mode MOSFET with 30V drain-source breakdown voltage and 65A continuous drain current. It features a low 6mOhm typical on-resistance and is housed in a P-TDSON-8 package for SMD mounting.
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BSC886N03LSG E8178

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSC886N03LSG E8178 is a single N-Channel enhancement mode MOSFET with 30V drain-source breakdown voltage and 65A continuous drain current. It features a low 6mOhm typical on-resistance and is housed in a P-TDSON-8 package for SMD mounting.
✓ Total Stock: 27,000 pcs
$ Price Range: $2.40

BSC886N03LSG E8178 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
27,000 pcs
On Request
27000 pcs On Request 1 On Request On Request 12+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSC886N03LSG E8178 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSC886N03LSG E8178 Description

Short technical summary and product information.

The BSC886N03LSG E8178 is an N-Channel enhancement mode MOSFET from Infineon Technologies. It features a drain-source breakdown voltage of 30V and a continuous drain current of 65A. The typical on-resistance is 6mOhms. Switching characteristics include a rise time of 3.2ns, fall time of 3ns, turn-on delay of 4.2ns, and turn-off delay of 18ns. The maximum gate-source voltage is 20V. Power dissipation is 2.5W. The device operates over a temperature range of -55°C to +150°C. It is packaged in a P-TDSON-8 case with SMD/SMT mounting and is available in tape and reel, cut tape, tray, or tube packaging.

BSC886N03LSG E8178 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSC886N03LSG E8178 N-Channel Enhancement Mode MOSFET, 30V, 65A, P-TDSON-8
Subcategory: Single N-Channel MOSFET

BSC886N03LSG E8178 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC886N03LSG E8178 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC886N03LSG E8178 Features

  • 30V drain-source breakdown voltage.
  • 65A continuous drain current rating.
  • 6mOhm typical on-resistance.
  • P-TDSON-8 SMD package.
  • Wide operating temperature range -55°C to +150°C.

BSC886N03LSG E8178 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management systems.
  • Ideal for load switching applications.
  • Applicable in battery protection circuits.

BSC886N03LSG E8178 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the BSC886N03LSG E8178?

30V.

What package type is the BSC886N03LSG E8178?

P-TDSON-8.

What is the operating temperature range of the BSC886N03LSG E8178?

-55°C to +150°C.

What is the continuous drain current rating?

65A.

What is the typical on-resistance?

6mOhms.

What are the switching times?

Rise time 3.2ns, fall time 3ns, turn-on delay 4.2ns, turn-off delay 18ns.

What is the maximum gate-source voltage?

20V.

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