BSC884N03MSG The BSC884N03MSG is an N-Channel power MOSFET from Infineon Technologies. It features a 34V drain-source voltage and 85A continuous drain current with a low 4.5mOhm on-resistance.
Mfr Part #:

BSC884N03MSG

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BSC884N03MSG is an N-Channel power MOSFET from Infineon Technologies. It features a 34V drain-source voltage and 85A continuous drain current with a low 4.5mOhm on-resistance.
✓ Total Stock: 8,214 pcs
$ Price Range: $0.55

BSC884N03MSG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,214 pcs
8214 pcs On Request 1 On Request On Request 0846+ On Request On Request

BSC884N03MSG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC884N03MSG Description

Short technical summary and product information.

The BSC884N03MSG is an N-Channel power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 34V and a continuous drain current of 85A at a case temperature of 25°C. The device features a very low maximum on-resistance of 4.5mOhm at a gate drive of 10V and 30A drain current. The gate threshold voltage is 2V maximum at 250µA drain current. The total gate charge is 34nC at 10V, and the input capacitance is 2700pF at 15V drain-source voltage.

 

The MOSFET is housed in an 8-PowerTDFN surface-mount package (supplier device package PG-TDSON-8-1). It can operate over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 50W at a case temperature of 25°C.

BSC884N03MSG Quick Information

Product Type: Power MOSFET
Canonical Name: BSC884N03MSG N-Channel Power MOSFET
Subcategory: Single N-Channel

BSC884N03MSG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BSC884N03MSG Estimated Pricing

Qty Low High
545+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC884N03MSG Features

  • N-Channel power MOSFET with 34V drain-source voltage.
  • 85A continuous drain current at case temperature 25°C.
  • Low 4.5mOhm maximum on-resistance at 10V gate drive.
  • Surface-mount package in 8-PowerTDFN (PG-TDSON-8-1).
  • Wide operating junction temperature range -55°C to 150°C.

BSC884N03MSG Applications

  • Suitable for high-efficiency DC-DC converter circuits.
  • Ideal for power management in computing systems.
  • Used in motor control and load switching applications.
  • Designed for battery protection and power distribution.

BSC884N03MSG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC884N03MSG?

The drain-source voltage (Vdss) is 34V.

What is the maximum continuous drain current?

The continuous drain current is 85A at a case temperature of 25°C, and 17A at an ambient temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds on) is 4.5mOhm at a drain current of 30A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the BSC884N03MSG come in?

It comes in an 8-PowerTDFN surface-mount package, also known as PG-TDSON-8-1.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 2V at a drain current of 250µA.

What is the maximum power dissipation?

The maximum power dissipation is 50W at a case temperature of 25°C, and 2.5W at an ambient temperature of 25°C.

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