Mfr Part #:

BSC884N03MS G

N-Channel power MOSFET from Infineon Technologies, rated for 34V drain-source voltage and 85A continuous drain current (Tc=25°C). Features low on-resistance of 4.5mOhm at 10V gate drive, suitable for high-efficiency switching applications.

✓ Total Stock: 651 pcs

$ Price Range: $0.55

BSC884N03MS G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	651 pcs On Request	651 pcs	On Request	1	On Request	On Request	13+	On Request	On Request

BSC884N03MS G Description

Short technical summary and product information.

The BSC884N03MS G is an N-channel power MOSFET manufactured by Infineon Technologies, utilizing MOSFET (Metal Oxide) technology. It is designed for high-current switching applications with a maximum drain-source voltage of 34V and a continuous drain current of 85A at Tc=25°C (17A at Ta=25°C).

The device features a low typical on-resistance of 4.5mOhm maximum at Id=30A and Vgs=10V, enabling efficient power conversion. The gate threshold voltage is 2V maximum at Id=250µA, and the gate charge is 34nC at 10V. Input capacitance is 2700pF at Vds=15V. The recommended gate drive voltage ranges from 4.5V to 10V for optimal Rds(on).

The MOSFET is housed in a surface-mount 8-PowerTDFN package (PG-TDSON-8-1), with a maximum power dissipation of 50W at Tc=25°C and 2.5W at Ta=25°C. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited).

Typical applications include power management circuits, DC-DC converters, load switches, and motor control in industrial and consumer electronics. The low on-resistance and high current capability make it suitable for high-efficiency designs where space is limited.

BSC884N03MS G Quick Information

Product Type: MOSFET

Canonical Name: Infineon Technologies BSC884N03MS G N-Channel Power MOSFET, 34V, 85A, 8-PowerTDFN

Subcategory: Single MOSFET

BSC884N03MS G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSC884N03MS G Estimated Pricing

Qty	Low	High
545+	$0.55	$0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC884N03MS G Features

Low on-resistance of 4.5mOhm typical.
High current rating of 85A continuous.
Surface-mount 8-PowerTDFN package.
RoHS3 compliant and REACH unaffected.
Operates from -55°C to 150°C junction.

BSC884N03MS G Applications

Used in DC-DC converter circuits.
Suitable for load switching applications.
Ideal for motor control designs.
Applicable in power management systems.

BSC884N03MS G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

34V maximum.

What is the maximum continuous drain current?

85A at Tc=25°C, 17A at Ta=25°C.

What is the on-resistance?

4.5mOhm maximum at Id=30A, Vgs=10V.

What is the gate threshold voltage?

2V maximum at Id=250µA.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

8-PowerTDFN (PG-TDSON-8-1).

Is the part RoHS compliant?

Yes, RoHS3 compliant (unverified).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	17A (Ta)
Drain to Source Voltage (Vdss)	34 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Supplier Device Package	PG-TDSON-8-1
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA