| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Infineon Technologies BSC883N03NS3G is a high-performance N-Channel Power MOSFET. It features a drain-source voltage (Vdss) of 34V and a continuous drain current (Id) of 17A at 25°C ambient temperature, and up to 85A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 4.5mOhm at 30A and 10V gate-source voltage, contributing to efficient power handling.
This device operates within a wide temperature range of -55°C to 150°C. It is housed in an 8-PowerTDFN package and is designed for surface mounting. The input capacitance (Ciss) is rated at 2700 pF at 15V, and the gate charge (Qg) is 34 nC at 10V, indicating moderate switching characteristics. The technology used is MOSFET (Metal Oxide), and it is classified as an N-Channel FET.
Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2V at 250µA and a maximum gate-source voltage (Vgs Max) of ±20V. The power dissipation is 2.5W at ambient temperature and 50W at case temperature, making it suitable for applications requiring robust thermal management. The OptiMOS™ series designation suggests advanced performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 34V.
The continuous drain current is 85A at Tc=25°C and 17A at Ta=25°C.
The maximum on-resistance is 4.5mOhm at Vgs=10V and Id=30A.
It is offered in an 8-PowerTDFN surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 2V at Id=250µA.
Maximum power dissipation is 50W at Tc=25°C and 2.5W at Ta=25°C.