| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,506 pcs
|
35506 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC883N03LSG is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power management applications. Key electrical specifications include a drain-to-source voltage (Vdss) of 34V, continuous drain current of 98A at case temperature 25°C (17A at ambient), and a maximum Rds(on) of 3.8 mOhm at 30A and 10V gate drive. The device features a gate charge of 34 nC at 10V and input capacitance of 2800 pF at 15V drain-source voltage. The threshold voltage is 2.2V maximum at 250µA. The MOSFET is capable of dissipating up to 57W at case temperature 25°C. It is offered in an 8-PowerTDFN surface mount package (PG-TDSON-8) and operates over a junction temperature range of -55°C to 150°C. The device is suitable for applications requiring low on-resistance and high current handling in a compact footprint.
The maximum drain-source voltage (Vdss) is 34V.
It is available in an 8-PowerTDFN surface mount package (PG-TDSON-8).
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this is unverified.
The continuous drain current is 98A at case temperature 25°C and 17A at ambient temperature.
The maximum on-resistance is 3.8 mOhm at 30A drain current and 10V gate-source voltage.
The maximum gate charge is 34 nC at 10V gate-source voltage.