| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,053 pcs
|
28053 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies BSC882N03MSG is an N-Channel enhancement mode power MOSFET built with MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion applications. The device offers a maximum drain-to-source voltage (Vdss) of 34 V and can handle a continuous drain current of 22 A at ambient temperature (Ta) and up to 100 A at case temperature (Tc). Key electrical characteristics include an ultra-low on-resistance of 2.6 mOhm maximum at Vgs=10V and Id=30A, a maximum gate charge of 55 nC at 10V, and a maximum input capacitance of 4300 pF at Vds=15V. The gate threshold voltage is 2V maximum at Id=250 µA, and the maximum gate-source voltage is ±20V. Recommended drive voltages are 4.5V and 10V. The device can dissipate up to 2.5W at ambient temperature and up to 69W at case temperature. It operates over a junction temperature range of -55°C to +150°C. The BSC882N03MSG is supplied in a surface-mount 8-PowerTDFN package with Infineon’s PG-TSDSON-8 footprint, making it suitable for compact, high-current circuit designs.
| Qty | Low | High |
|---|---|---|
| 394+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 34 V.
22 A at ambient temperature (Ta) and 100 A at case temperature (Tc).
Maximum on-resistance is 2.6 mOhm at Vgs=10 V and Id=30 A.
8-PowerTDFN with supplier device package PG-TSDSON-8, surface mount.
-55°C to +150°C (junction temperature).
The RoHS status is listed as RoHS3 Compliant, but this is unverified.