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BSC882N03MS The Infineon Technologies BSC882N03MS is a P-Channel MOSFET designed for various applications. It features a 30V drain-source voltage and a continuous drain current of 2.5A.
Mfr Part #:

BSC882N03MS

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC882N03MS is a P-Channel MOSFET designed for various applications. It features a 30V drain-source voltage and a continuous drain current of 2.5A.
✓ Total Stock: 3,500 pcs
$ Price Range: $2.40

BSC882N03MS Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,500 pcs
On Request
3500 pcs On Request 1 On Request On Request 12+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSC882N03MS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
SVHC Present
Supplier Device Package
Technology
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BSC882N03MS Description

Short technical summary and product information.

The Infineon Technologies BSC882N03MS is a P-Channel MOSFET with a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 2.5A at 25°C. This device has a maximum on-resistance (Rds(on)) of 95mOhm at 3.8A and 10V gate drive voltage.

 

It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 650mW. The MOSFET features a gate threshold voltage (Vgs(th)) of 2.1V at 250µA and a maximum gate-to-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is 254pF at 25V, and gate charge (Qg) is 3.1nC at 4.5V.

 

Packaged in a surface-mount SOT-23-3 (TO-236-3, SC-59) package, the BSC882N03MS is suitable for compact designs. Its P-channel configuration and specified electrical characteristics make it a versatile component for power management and switching applications.

BSC882N03MS Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies BSC882N03MS P-Channel MOSFET
Subcategory: Single

BSC882N03MS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BSC882N03MS Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC882N03MS Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 2.5A at 25°C.
  • Low on-resistance of 95mOhm at 3.8A, 10V.
  • Surface mount SOT-23-3 package.
  • Wide operating temperature range of -55°C to 150°C.

BSC882N03MS Applications

  • Suitable for power switching applications.
  • Used in battery management circuits.
  • Ideal for load switch designs.
  • Applicable in general-purpose electronics.

BSC882N03MS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What package is the BSC882N03MS available in?

SOT-23-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum continuous drain current?

2.5A at 25°C ambient.

What is the on-resistance of the MOSFET?

95mΩ maximum at Vgs=10V, Id=3.8A.

What is the gate threshold voltage?

2.1V maximum at 250µA.

What is the gate charge?

3.1nC at Vgs=4.5V.

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