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BSC882N03LS G N-Channel Power MOSFET from Infineon Technologies. Features 34V drain-source voltage, 4.2mOhm on-resistance, and surface mount PG-TDSON-8-6 package.
Mfr Part #:

BSC882N03LS G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET from Infineon Technologies. Features 34V drain-source voltage, 4.2mOhm on-resistance, and surface mount PG-TDSON-8-6 package.
✓ Total Stock: 80 pcs

BSC882N03LS G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
80 pcs
On Request
80 pcs On Request 1 On Request On Request 18+ On Request On Request
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BSC882N03LS G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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BSC882N03LS G Description

Short technical summary and product information.

The BSC882N03LS G is an N-Channel Power MOSFET from Infineon Technologies. It features a drain-source voltage rating of 34V and a low on-resistance of 4.2 mOhm maximum at 30A drain current with 10V gate drive. The device has a maximum input capacitance of 3700 pF at 15V and a gate threshold voltage of 2.2V maximum at 250µA. It operates over a junction temperature range of -55°C to 150°C.

 

This MOSFET is designed for surface mount assembly in an 8-PowerTDFN package, also known as PG-TDSON-8-6. The compact package enables efficient thermal management and space-saving layouts in power management circuits.

 

Typical applications include low-voltage power switching, DC-DC converters, and load switching in portable and industrial electronics. The device is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

BSC882N03LS G Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: Infineon BSC882N03LS G N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

BSC882N03LS G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC882N03LS G Features

  • N-Channel MOSFET with 34V drain-source voltage.
  • Low on-resistance of 4.2 milliohms.
  • Surface mount PG-TDSON-8-6 package.
  • Operating temperature range -55 to 150°C.
  • Input capacitance 3700 pF at 15V.

BSC882N03LS G Applications

  • Power management in portable devices.
  • DC-DC converter circuits.
  • Load switching applications.
  • Battery protection circuits.

BSC882N03LS G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

34V.

What is the on-resistance?

4.2 mOhm maximum at 30A drain current with 10V gate drive.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is this MOSFET available in?

8-PowerTDFN (PG-TDSON-8-6).

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate threshold voltage?

2.2V maximum at 250µA drain current.

What is the input capacitance?

3700 pF at 15V drain-source voltage.

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