| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,600 pcs
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4600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
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| Tape & Reel | |
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The BSC670N25NSFDATMA1 is an N-Channel MOSFET from Infineon Technologies, part of the OptiMOS 3 power transistor family. It is designed for high-frequency switching and synchronous rectification applications, offering a maximum drain-source voltage of 250V and a continuous drain current of 24A at 25°C case temperature. The device features a very low on-resistance of 67mΩ at Vgs=10V and Id=24A, contributing to excellent gate charge times on-resistance figure of merit.
This MOSFET is rated for operation up to 175°C junction temperature, with a maximum power dissipation of 150W at 25°C case temperature. It supports a gate-source voltage range of ±20V and has a maximum gate charge of 30nC at Vgs=10V. The input capacitance is 2410pF at Vds=125V, and the device can handle pulsed drain currents up to 96A.
The BSC670N25NSFDATMA1 comes in a PG-TDSON-8 surface-mount package, suitable for compact PCB designs. It is Pb-free and RoHS compliant, and halogen-free according to IEC61249-2-21. The device is qualified according to JEDEC standards for target applications.
With its high voltage rating and low on-resistance, this MOSFET is suitable for power conversion circuits, switching power supplies, and other applications requiring efficient high-voltage switching. The surface-mount package enables automated assembly and space-efficient layouts.
The maximum drain-source voltage is 250V.
The continuous drain current is 24A at Tc=25°C and 19A at Tc=100°C.
The maximum drain-source on-state resistance is 67mΩ at Vgs=10V and Id=24A.
The operating junction temperature range is -55°C to 175°C.
The device comes in a PG-TDSON-8 surface-mount package.
Yes, the datasheet states it is Pb-free and RoHS compliant.
The maximum power dissipation is 150W at Tc=25°C.