| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,646 pcs
|
1646 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Halogen Free | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Infineon BSC670N25NSFD is an N-channel OptiMOSTM3 Power-Transistor with a maximum Drain-Source Voltage (VDS) of 250V. It features a very low on-resistance (RDS(on)) of 67mΩ at 25°C, making it suitable for applications requiring high efficiency.
This MOSFET is rated for continuous drain current (ID) of 24A at 25°C and 19A at 100°C. It also boasts a high avalanche energy rating and is designed for high-frequency switching and synchronous rectification.
The component is supplied in a PG-TDSON-8 package. It is Pb-free and RoHS compliant, and halogen-free according to IEC61249-2-21.
Key performance parameters include a maximum VDS of 250V, a maximum RDS(on) of 67mΩ, and a continuous drain current of 24A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the BSC670N25NSFD is 250V.
The maximum On-Resistance (RDS(on)) of the BSC670N25NSFD is 67mΩ at TC=25°C.
The continuous drain current (ID) for the BSC670N25NSFD is 24A at TC=25°C.
The operating and storage temperature range for the BSC670N25NSFD is -55°C to 175°C.
The BSC670N25NSFD is supplied in the PG-TDSON-8 package.
The BSC670N25NSFD is RoHS3 Compliant.
Yes, the BSC670N25NSFD is halogen-free.