BSC600N25NS3GATMA1 The BSC600N25NS3GATMA1 is an N-Channel power MOSFET from Infineon Technologies, rated for 250V drain-source voltage and 25A continuous drain current. It features a low on-resistance of 60mΩ and is housed in a surface-mount PG-TDSON-8-1 package.
Mfr Part #:

BSC600N25NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BSC600N25NS3GATMA1 is an N-Channel power MOSFET from Infineon Technologies, rated for 250V drain-source voltage and 25A continuous drain current. It features a low on-resistance of 60mΩ and is housed in a surface-mount PG-TDSON-8-1 package.
✓ Total Stock: 2,035 pcs
$ Price Range: $1.52 - $4.21

BSC600N25NS3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC600N25NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC600N25NS3GATMA1 Description

Short technical summary and product information.

The BSC600N25NS3GATMA1 is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It is designed for high-frequency switching and synchronous rectification applications, offering a drain-source voltage rating of 250V and a continuous drain current of 25A at Tc=25°C.

 

Key electrical characteristics include a maximum drain-source on-resistance of 60mΩ at Vgs=10V and Id=25A, a maximum gate charge of 29nC at Vgs=10V, and an input capacitance of 2350pF at Vds=100V. The device can dissipate up to 125W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in an 8-PowerTDFN package (PG-TDSON-8-1) and is surface-mountable. It is Pb-free lead plating, RoHS compliant, and halogen-free according to IEC61249-2-21. The device is qualified according to JEDEC standards for target applications.

BSC600N25NS3GATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS 3
Canonical Name: N-Channel 250V 25A Power MOSFET
Subcategory: Single N-Channel Power MOSFET

BSC600N25NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC600N25NS3GATMA1 Estimated Pricing

Qty Low High
1+ $4.21 $4.21
10+ $2.77 $2.77
100+ $1.95 $1.95
500+ $1.63 $1.63
2,500+ $1.52 $1.52
5,000+ $1.52 $1.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC600N25NS3GATMA1 Features

  • N-Channel 250V drain-source voltage.
  • 25A continuous drain current rating.
  • Low 60mΩ maximum on-resistance.
  • Surface-mount PG-TDSON-8-1 package.
  • RoHS compliant and halogen-free.

BSC600N25NS3GATMA1 Applications

  • Ideal for high-frequency switching circuits.
  • Used in synchronous rectification applications.
  • Suitable for power supply designs.
  • Applicable in DC-DC converter stages.

BSC600N25NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC600N25NS3GATMA1?

The maximum drain-source voltage (Vdss) is 250V.

What is the continuous drain current rating?

The continuous drain current is 25A at Tc=25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSC600N25NS3GATMA1 RoHS compliant?

Yes, the device is RoHS compliant and Pb-free lead plating.

What is the package type of this MOSFET?

The package is 8-PowerTDFN, with supplier device package PG-TDSON-8-1, and mounting type is surface mount.

What is the maximum on-resistance at Vgs=10V?

The maximum drain-source on-resistance is 60mΩ at Vgs=10V and Id=25A.

What is the maximum power dissipation?

The maximum power dissipation is 125W at Tc=25°C.

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