| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 1819+ | On Request | On Request |
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| Technology |
The Infineon BSC520N15NS3G is a high-performance N-Channel MOSFET designed for various power applications. It features a drain-source breakdown voltage of 150V and can handle a continuous drain current of 21A.
Key electrical characteristics include a low drain-source on-resistance of 52 mOhms and a gate-source threshold voltage of 3V. The device operates within a temperature range of -55C to +150C and has a power dissipation rating of 57W. The maximum gate-source voltage is 20V, with a gate charge of 8.7 nC.
This MOSFET is manufactured using Silicon technology and belongs to the Optimos tradename and BSC520n15 series. It is configured as a single channel device.
The BSC520N15NS3G is available in a TDSON-8 surface-mount package, supplied on a reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 150V.
The continuous drain current is 21A.
The drain-source on-resistance is 52 mOhms.
The operating temperature range is -55C to +150C.
It is supplied in a TDSON-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.