BSC500N20NS3GATMA1 N-Channel 200V, 24A MOSFET in PG-TDSON-8 package. Features 50mΩ Rds(on), 15nC gate charge, RoHS compliant.
Mfr Part #:

BSC500N20NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 200V, 24A MOSFET in PG-TDSON-8 package. Features 50mΩ Rds(on), 15nC gate charge, RoHS compliant.
✓ Total Stock: 1,556 pcs
$ Price Range: $0.97 - $2.81

BSC500N20NS3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC500N20NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC500N20NS3GATMA1 Description

Short technical summary and product information.

The Infineon BSC500N20NS3GATMA1 is an N-channel MOSFET built on OptiMOS 3 technology. It delivers a maximum drain-to-source voltage of 200 V and continuous drain current of 24 A at Tc=25°C (17 A at 100°C). With a maximum on-resistance of 50 mΩ at Vgs=10V and Id=22A, and a low gate charge of 15 nC, it is designed for efficient high-frequency switching and synchronous rectification applications.

 

The device is qualified according to JEDEC standards and features Pb-free lead plating, making it RoHS compliant. It is also halogen-free according to IEC61249-2-21. The MOSFET is surface-mountable in an 8-PowerTDFN package (PG-TDSON-8-1), suitable for space-constrained power conversion boards.

 

With 96 W maximum power dissipation at Tc=25°C and an operating junction temperature range of -55°C to 150°C, this part is appropriate for industrial power supplies, multi-phase converters, and other high-current switching circuits. Avalanche energy of 120 mJ and reverse diode dv/dt rating of 50 kV/µs provide ruggedness for demanding load conditions.

BSC500N20NS3GATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS 3
Canonical Name: N-Channel 200V Power MOSFET
Subcategory: N-Channel MOSFET

BSC500N20NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC500N20NS3GATMA1 Estimated Pricing

Qty Low High
1+ $2.81 $2.81
10+ $1.80 $1.80
100+ $1.35 $1.35
500+ $1.09 $1.09
1,000+ $1.03 $1.03
2,500+ $0.99 $0.99
5,000+ $0.97 $0.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC500N20NS3GATMA1 Features

  • N-channel enhancement mode power MOSFET.
  • 24A continuous drain current rating.
  • Maximum 50mΩ on-resistance Rds(on).
  • Low 15nC gate charge rating.
  • RoHS compliant with Pb-free leads.

BSC500N20NS3GATMA1 Applications

  • Ideal for high-frequency switching circuits.
  • Used in synchronous rectification stages.
  • Suitable for power supply converters.

BSC500N20NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss)?

The maximum Vdss is 200 V.

What package is the BSC500N20NS3GATMA1 available in?

It is available in an 8-PowerTDFN package (PG-TDSON-8-1).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the device RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating.

What is the continuous drain current at Tc=25°C?

The continuous drain current is 24 A at Tc=25°C, and 17 A at Tc=100°C.

What is the maximum on-resistance (Rds(on))?

Maximum Rds(on) is 50 mΩ at Vgs=10V, Id=22A.

What is the total gate charge?

The total gate charge is 15 nC (max) at Vgs=10V.

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