BSC440N10NS3GATMA1 This is an N-Channel MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 44mΩ max at 10V gate drive.
Mfr Part #:

BSC440N10NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
This is an N-Channel MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 18A continuous drain current. It features a low on-resistance of 44mΩ max at 10V gate drive.
✓ Total Stock: 5,978 pcs
$ Price Range: $0.28 - $0.65

BSC440N10NS3GATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,978 pcs
5978 pcs On Request 1 On Request On Request 15+ On Request On Request

BSC440N10NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC440N10NS3GATMA1 Description

Short technical summary and product information.

The BSC440N10NS3GATMA1 is an N-Channel Power MOSFET from Infineon Technologies, designed for switching applications requiring high efficiency. With a maximum drain-source voltage of 100V and continuous drain current of 18A at Tc=25°C, it is suitable for DC-DC converters, motor control, and power management. The device offers a maximum drain-source on-resistance of 44mΩ at Vgs=10V, Id=12A, and 86mΩ at Vgs=6V, Id=6A. Gate charge is only 10.8nC typical, enabling fast switching. The MOSFET is housed in a PG-TDSON-8 surface-mount package (8-PowerTDFN) with a compact footprint. It can operate over a junction temperature range of -55°C to 150°C. The avalanche energy rating is 18mJ at 12A, indicating robust ruggedness. The device is RoHS compliant and has an MSL of 1 for unlimited floor life. For design engineers, the low Rds(on) and low gate charge make it ideal for high-frequency switching. The thermal resistance junction-to-case is 4.3 K/W, allowing efficient heat dissipation.

BSC440N10NS3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon BSC440N10NS3GATMA1 N-Channel MOSFET, 100V, 18A, PG-TDSON-8
Subcategory: Single N-Channel Power MOSFET

BSC440N10NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

BSC440N10NS3GATMA1 Estimated Pricing

Qty Low High
1+ $0.65 $0.65
10+ $0.59 $0.59
100+ $0.46 $0.46
500+ $0.37 $0.37
1,000+ $0.30 $0.30
2,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC440N10NS3GATMA1 Features

  • 100V drain-source voltage rating.
  • 18A continuous drain current at 25°C.
  • Low on-resistance of 44 mΩ maximum.
  • Fast switching with 10.8 nC gate charge.
  • Surface-mount PG-TDSON-8 package.

BSC440N10NS3GATMA1 Applications

  • Suitable for DC-DC converter circuits.
  • Ideal for motor control applications.
  • Used in power management systems.
  • Applicable in synchronous rectification.

BSC440N10NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is 100V.

What package is the BSC440N10NS3GATMA1 available in?

It is available in an 8-PowerTDFN surface-mount package, also known as PG-TDSON-8.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the BSC440N10NS3GATMA1 RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the continuous drain current rating?

At Tc=25°C, it is 18A; at Tc=100°C, 11A; at Ta=25°C, 5.3A.

What is the on-resistance of this MOSFET?

The typical Rds(on) is 38mΩ at Vgs=10V, Id=12A, with a maximum of 44mΩ.

What is the gate charge?

Total gate charge is 8.1nC typical, 10.8nC maximum at Vgs=10V.

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