| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
640 pcs
|
640 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The BSC440N10NS3 from Infineon Technologies is an N-channel MOSFET designed for power applications. It features a drain-source breakdown voltage of 100V and a maximum continuous drain current of 18A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (RDS(on)) of 44mΩ at 10V gate-source voltage and 12A drain current. The device also offers a typical gate threshold voltage of 2.7V and a total gate charge of 10.8nC maximum.
With a power dissipation rating of 29W at 25°C case temperature and an operating temperature range of -55°C to 150°C, the BSC440N10NS3 is suitable for various demanding applications. It is packaged in a PG-TDSON-8 surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V
PG-TDSON-8
-55 °C to 150 °C
18 A at TC = 25 °C; 11 A at TC = 100 °C; 5.3 A at TA = 25 °C with RthJA = 50 K/W.
Maximum 44 mΩ at VGS = 10 V, ID = 12 A; maximum 86 mΩ at VGS = 6 V, ID = 6 A.
Maximum 10.8 nC.
29 W at TC = 25 °C.