BSC320N20NS3GATMA1 N-Channel MOSFET from Infineon Technologies with 200V drain-source breakdown voltage and 36A continuous drain current. Features low on-resistance of 32mΩ and is housed in a PG-TDSON-8 surface-mount package.
Mfr Part #:

BSC320N20NS3GATMA1

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 200V drain-source breakdown voltage and 36A continuous drain current. Features low on-resistance of 32mΩ and is housed in a PG-TDSON-8 surface-mount package.
✓ Total Stock: 28,480 pcs
$ Price Range: $1.21 - $3.33

BSC320N20NS3GATMA1 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
24,900 pcs
24900 pcs On Request 1 On Request On Request 22+ On Request On Request
Non-Authorised Inventory information
3,127 pcs
3127 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
453 pcs
453 pcs On Request 1 On Request On Request 24+ On Request On Request

BSC320N20NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSC320N20NS3GATMA1 Description

Short technical summary and product information.

The BSC320N20NS3GATMA1 is an N-channel MOSFET from Infineon Technologies, built on the OptiMOS 3 technology platform. It is rated for a maximum drain-source breakdown voltage of 200V and a continuous drain current of 36A at Tc=25°C, making it suitable for medium-voltage power switching applications.

 

Key electrical characteristics include a maximum drain-source on-resistance of 32mΩ at Vgs=10V, a maximum gate charge of 29nC, and an input capacitance of 2350pF at Vds=100V. The device also features an avalanche energy rating of 190mJ and a reverse diode dv/dt capability of 10kV/µs, indicating robust ruggedness for inductive load switching.

 

The MOSFET is offered in a PG-TDSON-8 surface-mount package, with a supplier device package designation of PG-TDSON-8-1. It is Pb-free, RoHS3 compliant, and halogen-free per IEC61249-2-21, supporting environmentally conscious design requirements.

 

This component is optimized for high-frequency switching and synchronous rectification in power conversion circuits. Its low figure of merit (gate charge x on-resistance) contributes to improved efficiency in DC-DC converters, motor drives, and other power management systems.

BSC320N20NS3GATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies BSC320N20NS3GATMA1 N-Channel MOSFET, 200V, 36A, PG-TDSON-8
Subcategory: N-Channel MOSFET

BSC320N20NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free (Pb-free)

BSC320N20NS3GATMA1 Estimated Pricing

Qty Low High
1+ $3.33 $3.33
10+ $2.15 $2.15
100+ $1.59 $1.59
500+ $1.32 $1.32
1,000+ $1.30 $1.30
2,500+ $1.25 $1.25
5,000+ $1.21 $1.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC320N20NS3GATMA1 Features

  • N-channel MOSFET with 200V drain-source rating.
  • Continuous drain current up to 36A at 25°C.
  • Low on-resistance of 32mΩ typical.
  • OptiMOS 3 technology for high efficiency.
  • RoHS compliant and halogen-free package.

BSC320N20NS3GATMA1 Applications

  • High-frequency switching power supply circuits.
  • Synchronous rectification in DC-DC converters.
  • Motor control and automotive applications.
  • Power management for industrial systems.

BSC320N20NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC320N20NS3GATMA1?

The maximum drain-source breakdown voltage is 200V.

What package type is the BSC320N20NS3GATMA1 available in?

It is available in a PG-TDSON-8 surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

Is the BSC320N20NS3GATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What is the maximum drain current?

The maximum continuous drain current is 36A at Tc=25°C, and 24A at Tc=100°C.

What is the on-resistance?

The maximum drain-source on-resistance is 32mΩ at Vgs=10V, Id=36A.

What is the gate charge?

The maximum gate charge is 29nC at Vgs=10V.

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