BSC265N10LSFGATMA1 N-Channel MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 6.5A (Ta) / 40A (Tc) continuous drain current, with 26.5mOhm on-resistance.
Mfr Part #:

BSC265N10LSFGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 100V drain-source voltage and 6.5A (Ta) / 40A (Tc) continuous drain current, with 26.5mOhm on-resistance.
✓ Total Stock: 36,020 pcs
$ Price Range: $0.55 - $1.99

BSC265N10LSFGATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC265N10LSFGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC265N10LSFGATMA1 Description

Short technical summary and product information.

The BSC265N10LSFGATMA1 is an N-Channel MOSFET from Infineon Technologies, designed for power switching applications. It features a 100V drain-source voltage (Vdss) and supports a continuous drain current of 6.5A at ambient temperature (Ta) and 40A at case temperature (Tc). The device has a maximum on-resistance of 26.5mOhm at Vgs=10V and Id=20A, ensuring efficient conduction.

 

Electrical characteristics include a gate charge (Qg) of 21nC at Vgs=10V and an input capacitance (Ciss) of 1600pF at Vds=50V, which are important for switching performance. The gate threshold voltage (Vgs(th)) is 2.4V at Id=43µA, and the maximum gate-source voltage is ±20V. The drive voltage range is 4.5V to 10V for optimal Rds(on) performance.

 

The MOSFET is surface-mount packaged in an 8-PowerTDFN (PG-TDSON-8-1) package, suitable for compact designs. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 78W at case temperature. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).

BSC265N10LSFGATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 2
Canonical Name: Infineon Technologies BSC265N10LSFGATMA1 N-Channel MOSFET, 100V Vds, 6.5A/40A Id, PG-TDSON-8-1
Subcategory: Single N-Channel

BSC265N10LSFGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC265N10LSFGATMA1 Estimated Pricing

Qty Low High
1+ $1.99 $1.99
10+ $1.27 $1.27
100+ $0.85 $0.85
500+ $0.68 $0.68
1,000+ $0.58 $0.58
5,000+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC265N10LSFGATMA1 Features

  • 100V drain-source voltage rating.
  • 6.5A (Ta) / 40A (Tc) continuous drain current.
  • 26.5mOhm maximum on-resistance at 10V gate drive.
  • Surface-mount PG-TDSON-8-1 package.
  • RoHS3 compliant and MSL level 1.

BSC265N10LSFGATMA1 Applications

  • Power management in DC-DC converters.
  • Load switching for portable electronics.
  • Motor control in low-voltage systems.
  • Battery protection circuits.

BSC265N10LSFGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC265N10LSFGATMA1?

The maximum drain-source voltage (Vdss) is 100 V.

What is the continuous drain current rating?

The continuous drain current is 6.5 A at ambient temperature (Ta) and 40 A at case temperature (Tc).

What is the package type of this MOSFET?

It is packaged in an 8-PowerTDFN case, also known as supplier package PG-TDSON-8-1.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the BSC265N10LSFGATMA1 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the typical gate charge of this device?

The maximum gate charge (Qg) is 21 nC at Vgs = 10 V.

What is the input capacitance?

The maximum input capacitance (Ciss) is 1600 pF at Vds = 50 V.

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