| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,718 pcs
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8718 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC205N10LSG is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion and switching applications. The device offers a drain-source breakdown voltage of 100V and a continuous drain current of 45A at a case temperature of 25°C. The maximum on-resistance is 20.5mOhm at a gate-source voltage of 10V and drain current of 45A, enabling low conduction losses.
Key electrical characteristics include a typical gate threshold voltage of 2.4V at 43µA drain current, a maximum gate charge of 41nC at 10V, and an input capacitance of 2900pF at 50V drain-source voltage. The device is specified for drive voltages of 4.5V and 10V for optimal Rds(on) performance. Maximum power dissipation is 76W at Tc=25°C, and the operating junction temperature range is -55°C to 150°C.
The BSC205N10LSG is housed in an 8-PowerTDFN package (PG-TDSON-8-1) and is designed for surface mount assembly. This compact package offers excellent thermal performance and is suitable for space-constrained designs. The MOSFET is ideal for use in DC-DC converters, power supplies, motor control, and load switching applications where high efficiency and reliability are required.
The drain-source breakdown voltage (Vdss) is 100V.
The maximum drain current is 45A at Tc=25°C and 7.4A at Ta=25°C.
The maximum on-resistance is 20.5mOhm at Vgs=10V and Id=45A.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-PowerTDFN package (PG-TDSON-8-1) for surface mount mounting.
The part is listed as RoHS3 Compliant, but this is unverified.
The maximum gate charge (Qg) is 41nC at Vgs=10V.