| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,000 pcs
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11000 pcs | On Request | 1 | On Request | On Request | 0951+ | On Request | On Request |
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The BSC205N10LS G is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion applications.
This MOSFET features a drain-source breakdown voltage of 100V, a continuous drain current of 45A at Tc=25°C, and a maximum drain-source on-resistance of 20.5mOhm at Vgs=10V, Id=45A. The gate threshold voltage is 2.4V maximum, and the total gate charge is 41nC. Input capacitance is 2900pF.
The device is housed in an 8-PowerTDFN package (PG-TDSON-8-1) and is surface-mountable. Maximum power dissipation is 76W at Tc=25°C, and the operating junction temperature range is -55°C to 150°C.
Typical applications include switching power supplies, DC-DC converters, and motor control circuits where high efficiency and low on-resistance are required.
100V.
7.4A at Ta=25°C and 45A at Tc=25°C.
Maximum 20.5mOhm at Vgs=10V, Id=45A.
8-PowerTDFN (PG-TDSON-8-1).
-55°C to 150°C (junction temperature).
RoHS3 Compliant.
Maximum 2.4V at Id=43µA.