| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,717 pcs
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8717 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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BSC200P03LSG is a P-channel power MOSFET from Infineon Technologies. It is designed for surface mount applications and comes in an 8-PowerTDFN package with supplier device package PG-TDSON-8-6. The device features a maximum drain-to-source voltage of 30V and continuous drain current ratings of 9.9A at ambient temperature and 12.5A at case temperature.
Key electrical characteristics include a maximum on-resistance of 20mOhm at a gate drive voltage of 10V, maximum gate threshold voltage of 1V at 100µA drain current, and maximum gate-source voltage of ±25V. The input capacitance is 2430pF at 15V drain-source voltage, and the total gate charge is 48.5nC at 10V gate-source voltage. Power dissipation is rated at 2.5W at ambient temperature and 63W at case temperature.
The MOSFET operates over a junction temperature range of -55°C to 150°C. With surface mount mounting and a compact 8-PowerTDFN package, this device is suitable for power management and switching applications. It is declared RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 472+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerTDFN surface mount package.
-55°C to 150°C (junction).
Yes, it is declared RoHS3 compliant.
9.9A at ambient temperature and 12.5A at case temperature.
Maximum 20mOhm at 12.5A drain current and 10V gate voltage.
1V at 100µA drain current.