| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies BSC190N15NS3GATMA1 is an N-Channel MOSFET designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 150V and a continuous drain current of 50A. The device offers a low on-resistance of 19mOhm at 10V gate drive, minimizing conduction losses. With a gate charge of 31nC and input capacitance of 2420pF, it enables fast switching performance.
The MOSFET is housed in a surface-mount 8-PowerTDFN package (PG-TDSON-8-1) with an exposed pad for effective thermal management. It can dissipate up to 125W and operates over a junction temperature range of -55°C to 150°C. These characteristics make it suitable for power supplies, DC-DC converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.27 | $3.27 |
| 10+ | $2.13 | $2.13 |
| 100+ | $1.47 | $1.47 |
| 500+ | $1.20 | $1.20 |
| 1,000+ | $1.16 | $1.16 |
| 5,000+ | $1.08 | $1.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V maximum.
8-PowerTDFN (PG-TDSON-8-1) surface mount package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
19 mOhm maximum at 50A, 10V.
31 nC maximum at 10V.
2420 pF maximum at 75V.