BSC160N10NS3GATMA1 N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 42A continuous drain current. Features low on-resistance of 16mOhm at 10V gate drive.
Mfr Part #:

BSC160N10NS3GATMA1

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 42A continuous drain current. Features low on-resistance of 16mOhm at 10V gate drive.
✓ Total Stock: 16,033 pcs
$ Price Range: $0.61 - $2.17

BSC160N10NS3GATMA1 Available from 3 distributors

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✓ Non-Authorised
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16,020 pcs
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7 pcs
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6 pcs
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BSC160N10NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC160N10NS3GATMA1 Description

Short technical summary and product information.

This is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It features a drain-source breakdown voltage of 100V and continuous drain current ratings of 42A at case temperature 25°C and 8.8A at ambient temperature 25°C. The device offers a low typical on-resistance of 13.9mOhm and maximum 16mOhm at Vgs=10V.

 

The MOSFET is designed for high efficiency power conversion applications. It has a maximum power dissipation of 60W at case temperature 25°C. The gate threshold voltage is 2V typical and 3.5V maximum. Total gate charge is 25nC maximum at 10V gate drive, enabling fast switching. The device also features low input capacitance of 1700pF and output capacitance of 320pF.

 

The device is housed in a PG-TDSON-8 package (8-PowerTDFN) for surface mount assembly. It has an operating junction temperature range of -55°C to 150°C. The junction-to-case thermal resistance is 2.1 K/W maximum. This MOSFET is suitable for applications such as DC-DC converters, motor drives, and power management in industrial and automotive systems.

BSC160N10NS3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies BSC160N10NS3GATMA1 N-Channel MOSFET, 100V, 42A, PG-TDSON-8
Subcategory: N-Channel MOSFET

BSC160N10NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC160N10NS3GATMA1 Estimated Pricing

Qty Low High
1+ $2.17 $2.17
10+ $1.39 $1.39
100+ $0.94 $0.94
500+ $0.74 $0.74
1,000+ $0.66 $0.66
5,000+ $0.61 $0.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC160N10NS3GATMA1 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current up to 42A at 25°C case.
  • Low on-resistance of 16mOhm maximum at 10V gate.
  • Fast switching with 25nC total gate charge.
  • Surface mount PG-TDSON-8 package for compact design.

BSC160N10NS3GATMA1 Applications

  • Used in DC-DC converter and power supply circuits.
  • Suitable for motor drive and load switch applications.
  • Ideal for high-efficiency power management systems.
  • Applicable in industrial and automotive electronics.

BSC160N10NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the continuous drain current?

42A at case temperature 25°C, 8.8A at ambient temperature 25°C.

What is the on-resistance?

Maximum 16mOhm at Vgs=10V, Id=33A; typical 13.9mOhm.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is this MOSFET available in?

PG-TDSON-8 (8-PowerTDFN) surface mount package.

Is this device RoHS compliant?

RoHS3 Compliant (unverified, low confidence).

What is the gate threshold voltage?

Maximum 3.5V at Vds=Vgs, Id=33µA; typical 2.7V.

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