| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,020 pcs
|
41020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
BSC150N03LDGATMA1 is a dual N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 series, designed for high efficiency DC/DC conversion and SMPS applications. Each channel features a 30V drain-source breakdown voltage, 20A continuous drain current (at Tc=25°C, Vgs=10V), and a maximum on-resistance of 15mΩ at Vgs=10V and Id=20A. The logic level gate threshold voltage (max 2.2V at Id=250µA) allows direct drive from 3.3V or 5V logic controllers. The device is 100% avalanche tested and offers excellent gate charge (13.2nC max at Vgs=10V) for fast switching. The PG-TDSON-8 package provides low thermal resistance and is halogen-free, Pb-free, and RoHS compliant. Operating temperature range is -55°C to 150°C junction.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
| 10+ | $0.80 | $0.80 |
| 100+ | $0.53 | $0.53 |
| 500+ | $0.41 | $0.41 |
| 1,000+ | $0.34 | $0.34 |
| 5,000+ | $0.32 | $0.32 |
| 10,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V minimum.
20A at Tc=25°C and Vgs=10V.
PG-TDSON-8 (8-PowerVDFN).
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant and halogen-free according to IEC61249-2-21.
15mΩ at Vgs=10V and Id=20A.
Yes, the maximum gate threshold voltage is 2.2V, allowing drive from 3.3V or 5V logic.