| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,896 pcs
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7896 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name |
The Infineon Technologies BSC130P03LSG is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vds) of 30V and a maximum continuous drain current (Id) of 22.5A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 13 mOhm at 22.5A and 10V gate-source voltage, contributing to efficient power handling.
This device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a compact 8-PowerTDFN (TDSON-8) surface-mount package, suitable for space-constrained designs. The input capacitance (Ciss) is 3670pF at 15V, and the gate charge (Qg) is 73.1nC at 10V.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.2V at 150µA and a maximum gate-to-source voltage (Vgs) of ±25V. The power dissipation is rated at 2.5W (Ta) and 69W (Tc), indicating its capability for handling significant power loads under appropriate thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
22.5A at case temperature (Tc) and 12A at ambient temperature (Ta).
13 mOhm maximum at 22.5A and 10V gate drive.
2.2V maximum at 150µA drain current.
8-PowerTDFN surface mount package.
-55°C to 150°C junction temperature.
Gate charge is 73.1nC at 10V, input capacitance is 3670pF at 15V.