BSC120N03MSGATMA1 N-Channel MOSFET, 30V drain-source voltage, 39A continuous drain current at Tc=25°C. Surface mount package PG-TDSON-8.
Mfr Part #:

BSC120N03MSGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 30V drain-source voltage, 39A continuous drain current at Tc=25°C. Surface mount package PG-TDSON-8.
✓ Total Stock: 3,723 pcs
$ Price Range: $0.21 - $0.96

BSC120N03MSGATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC120N03MSGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC120N03MSGATMA1 Description

Short technical summary and product information.

The BSC120N03MSGATMA1 is an N-Channel MOSFET from Infineon's OptiMOS 3 M-Series, designed for high-efficiency power conversion. It features a drain-source voltage rating of 30V and a continuous drain current of 39A at Tc=25°C (11A at Ta=25°C). The device offers low on-resistance: 12 mOhm max at Vgs=10V and 14 mOhm max at Vgs=4.5V, enabling low conduction losses. Gate charge characteristics include a typical gate-to-source charge (Qgs) of 3.8 nC, contributing to fast switching. Input capacitance is 1100 pF typical at Vds=15V. The MOSFET is avalanche rated with a single pulse avalanche current of 35A and energy of 10 mJ. It is optimized for 5V gate drive applications, making it suitable for notebook, VGA, and point-of-load (POL) converters. The device is 100% avalanche tested and qualified according to JEDEC standards. It comes in a PG-TDSON-8 (8-PowerTDFN) surface mount package with superior thermal resistance (RthJC 4.5 K/W). Operating junction temperature range is -55°C to 150°C. The component is RoHS compliant and halogen-free according to IEC61249-2-21.

BSC120N03MSGATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3 M-Series
Canonical Name: BSC120N03MSGATMA1 N-Channel MOSFET 30V 39A PG-TDSON-8
Subcategory: N-Channel MOSFET

BSC120N03MSGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: No

BSC120N03MSGATMA1 Estimated Pricing

Qty Low High
1+ $0.96 $0.96
10+ $0.60 $0.60
100+ $0.39 $0.39
500+ $0.30 $0.30
1,000+ $0.24 $0.24
5,000+ $0.23 $0.23
10,000+ $0.22 $0.22
25,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC120N03MSGATMA1 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current up to 39A at 25°C.
  • Low on-resistance of 12 mOhm at 10V gate drive.
  • Optimized for 5V gate driver applications.
  • 100% avalanche tested for reliability.

BSC120N03MSGATMA1 Applications

  • Ideal for high-frequency SMPS designs.
  • Suitable for notebook and VGA power stages.
  • Used in POL (point-of-load) converters.
  • Perfect for battery-powered applications.

BSC120N03MSGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What package is this MOSFET available in?

PG-TDSON-8 (8-PowerTDFN).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this component RoHS compliant?

Yes, RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the maximum continuous drain current?

39A at Tc=25°C with Vgs=10V.

What is the typical on-resistance at 10V gate drive?

10 mOhm typical, 12 mOhm maximum.

Is this MOSFET avalanche rated?

Yes, single pulse avalanche current 35A, energy 10 mJ.

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