| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,905 pcs
|
2905 pcs | On Request | 1 | On Request | On Request | 1010+PB | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC119N03MSCG is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, built using MOSFET (Metal Oxide) technology. It features a drain-source breakdown voltage of 30V and a continuous drain current of 39A at case temperature 25°C (11A at ambient temperature 25°C). The device achieves a maximum on-resistance of 11.9mOhm at 30A and 10V gate drive, with a maximum gate threshold voltage of 2V at 250µA. Total gate charge is 20nC at 10V, and input capacitance is 1500pF at 15V drain-source voltage. The MOSFET is designed for surface mount assembly in an 8-PowerTDFN package (PG-TDSON-8). It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 28W at case temperature 25°C (2.5W at ambient). The device is RoHS3 compliant and has an MSL rating of 1 (unlimited). Typical applications include power management, DC-DC converters, and low-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.26 | $0.26 |
| 200+ | $0.10 | $0.10 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
Surface mount 8-PowerTDFN (PG-TDSON-8).
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
11.9mOhm maximum at 30A, 10V gate drive.
39A at case temperature 25°C, or 11A at ambient temperature 25°C.
20nC maximum at 10V gate-source voltage.