BSC119N03MSCG The BSC119N03MSCG is an N-Channel power MOSFET from Infineon Technologies. It offers a 30V drain-source breakdown voltage and 39A continuous drain current, with low on-resistance of 11.9mOhm.
Mfr Part #:

BSC119N03MSCG

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BSC119N03MSCG is an N-Channel power MOSFET from Infineon Technologies. It offers a 30V drain-source breakdown voltage and 39A continuous drain current, with low on-resistance of 11.9mOhm.
✓ Total Stock: 2,905 pcs
$ Price Range: $0.10 - $0.26

BSC119N03MSCG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,905 pcs
2905 pcs On Request 1 On Request On Request 1010+PB On Request On Request

BSC119N03MSCG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC119N03MSCG Description

Short technical summary and product information.

The BSC119N03MSCG is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, built using MOSFET (Metal Oxide) technology. It features a drain-source breakdown voltage of 30V and a continuous drain current of 39A at case temperature 25°C (11A at ambient temperature 25°C). The device achieves a maximum on-resistance of 11.9mOhm at 30A and 10V gate drive, with a maximum gate threshold voltage of 2V at 250µA. Total gate charge is 20nC at 10V, and input capacitance is 1500pF at 15V drain-source voltage. The MOSFET is designed for surface mount assembly in an 8-PowerTDFN package (PG-TDSON-8). It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 28W at case temperature 25°C (2.5W at ambient). The device is RoHS3 compliant and has an MSL rating of 1 (unlimited). Typical applications include power management, DC-DC converters, and low-voltage switching circuits.

BSC119N03MSCG Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: BSC119N03MSCG N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

BSC119N03MSCG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC119N03MSCG Estimated Pricing

Qty Low High
1+ $0.26 $0.26
200+ $0.10 $0.10
500+ $0.10 $0.10
1,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC119N03MSCG Features

  • N-Channel power MOSFET with 30V drain-source voltage.
  • 39A continuous drain current at Tc=25°C.
  • Low on-resistance of 11.9mOhm at 30A, 10V.
  • Surface mount PG-TDSON-8 package.
  • Operating temperature range -55°C to 150°C.

BSC119N03MSCG Applications

  • Power management and DC-DC converter circuits.
  • Load switching and battery protection.
  • General low-voltage power switching.

BSC119N03MSCG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC119N03MSCG?

30V.

What is the package type of the BSC119N03MSCG?

Surface mount 8-PowerTDFN (PG-TDSON-8).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the BSC119N03MSCG RoHS compliant?

Yes, RoHS3 compliant.

What is the typical on-resistance?

11.9mOhm maximum at 30A, 10V gate drive.

What is the continuous drain current rating?

39A at case temperature 25°C, or 11A at ambient temperature 25°C.

What is the gate charge of the device?

20nC maximum at 10V gate-source voltage.

Home
Account

Categories