| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
91,404 pcs
|
91404 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies BSC110N15NS5 is a high-performance N-channel MOSFET belonging to the OptiMOSTM 5 family. It is rated for a maximum drain-source voltage (VDS) of 150V and features a very low on-resistance (RDS(on),max) of 11 mΩ. This device is designed for efficient operation, indicated by its excellent gate charge x RDS(on) product (FOM).
With a continuous drain current (ID) capability of 76A at 25°C, the BSC110N15NS5 is suitable for demanding power applications. It supports a wide operating temperature range from -55°C to 150°C, making it robust for various environments. The MOSFET is housed in a PG-TDSON-8 package, designed for surface mounting.
Key electrical parameters include a gate-source voltage (VGS) range of ±20V, a maximum power dissipation (Ptot) of 125W at 25°C, and specific charge characteristics like QOSS of 78nC and QG of 28nC. Its design is ideal for high-frequency switching and synchronous rectification applications, offering excellent performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
11mOhm maximum.
76A at 25°C case temperature, 48A at 100°C.
-55°C to 150°C.
PG-TDSON-8 surface-mount package.
Typical 28nC.
100mJ single pulse.