| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,243 pcs
|
24243 pcs | On Request | 1 | On Request | On Request | 1718+ | On Request | On Request | |
|
9,063 pcs
|
9063 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,651 pcs
|
1651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
84 pcs
|
84 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation |
The Infineon BSC110N15NS5 is an N-channel, normal level MOSFET from the OptiMOSTM 5 family, designed for 150V operation. It offers excellent gate charge x RDS(on) product (FOM) and very low on-resistance, with a maximum RDS(on) of 11 mΩ at specified conditions.
Key electrical parameters include a maximum continuous drain current of 76A at 25°C case temperature and 48A at 100°C case temperature. The pulsed drain current can reach up to 304A. It supports a gate source voltage range of ±20V and has a maximum power dissipation of 125W at 25°C case temperature.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a PG-TDSON-8 package, suitable for surface mounting. The component is Pb-free and RoHS compliant, qualified according to JEDEC standards for target applications such as high-frequency switching and synchronous rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
PG-TDSON-8.
-55 to 150°C.
76A.
11mΩ.
28nC.
100mJ.