| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| SVHC Present |
The Infineon Technologies BSC100N03MS is an N-channel OptiMOS™3 M-Series Power-MOSFET. It is optimized for 5V driver applications, including notebook, VGA, and POL power supplies. This MOSFET offers a low on-resistance (RDS(on)) and excellent gate charge times resistance product (FOM), making it suitable for high-frequency SMPS.
Key electrical characteristics include a drain-source breakdown voltage of 30V and continuous drain currents up to 44A. The device exhibits low gate charge and dynamic characteristics, ensuring efficient switching performance. It is supplied in a PG-TDSON-8 package.
The BSC100N03MS is 100% avalanche tested and qualified according to JEDEC standards for target applications. It features superior thermal resistance and is Pb-free plated and RoHS compliant, as well as Halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The gate threshold voltage is typically between 1 V and 2 V.
The maximum continuous drain current is 44 A when VGS=10 V and TC=25 °C.
The maximum power dissipation is 30 W at TC=25 °C.
The package type is PG-TDSON-8.
Yes, the BSC100N03MS is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.