| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,340 pcs
|
22340 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
349 pcs
|
349 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC100N03LSG is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications.
Key electrical specifications include a continuous drain current of 13A at ambient temperature (Ta) and 44A at case temperature (Tc). The maximum drain-source on-resistance is 10mOhm at a gate voltage of 10V and drain current of 30A. The gate threshold voltage is 2.2V maximum at 250µA drain current. The device can handle a maximum gate-source voltage of ±20V and has a typical gate charge of 17nC at 10V. Power dissipation is rated at 2.5W at ambient and 30W at case temperature.
The MOSFET is housed in an 8-PowerTDFN package with a supplier device package of PG-TDSON-8, designed for surface mount assembly. It is suitable for applications requiring low on-resistance and high current handling in a compact footprint.
The BSC100N03LSG is available in an 8-PowerTDFN package with supplier device package PG-TDSON-8.
The BSC100N03LSG is listed as RoHS3 Compliant.
The continuous drain current is 13A at ambient temperature and 44A at case temperature.
The maximum drain-source on-resistance is 10mOhm at Vgs=10V and Id=30A.
The maximum gate threshold voltage is 2.2V at Id=250µA.
The maximum gate-source voltage is ±20V.
The maximum gate charge is 17nC at Vgs=10V.