BSC094N03S G N-Channel MOSFET from Infineon Technologies with 30V drain-source voltage and 35A maximum drain current. Features 9.4 mOhm on-resistance at 10V gate drive.
Mfr Part #:

BSC094N03S G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 30V drain-source voltage and 35A maximum drain current. Features 9.4 mOhm on-resistance at 10V gate drive.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.58

BSC094N03S G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 07+ On Request On Request

BSC094N03S G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC094N03S G Description

Short technical summary and product information.

The BSC094N03S G is an N-Channel enhancement mode MOSFET from Infineon Technologies, built with MOSFET (Metal Oxide) technology. It is designed for efficient power switching applications requiring a 30V drain-source voltage rating and a continuous drain current of up to 35A at case temperature (Tc).

 

Key electrical characteristics include a maximum drain-source on-resistance of 9.4 mOhm at 10V gate drive and 35A drain current, with a gate threshold voltage of 2V at 25µA. The device features an input capacitance of 1800 pF at 15V and a maximum gate charge of 14 nC at 5V, enabling efficient gate drive performance.

 

The MOSFET is housed in an 8-PowerTDFN surface mount package with a supplier device package designation of PG-TDSON-8-1. It supports an operating junction temperature range of -55°C to 150°C and offers maximum power dissipation of 52W at case temperature.

BSC094N03S G Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies BSC094N03S G N-Channel MOSFET
Subcategory: Single N-Channel

BSC094N03S G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC094N03S G Estimated Pricing

Qty Low High
5,000+ $0.58 $0.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC094N03S G Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Maximum drain current of 35A at case temperature.
  • Low on-resistance of 9.4 mOhm at 10V gate drive.
  • Surface mount PG-TDSON-8-1 package.
  • Operating temperature range of -55°C to 150°C.

BSC094N03S G Applications

  • Suitable for low-voltage power switching circuits.
  • Used in DC-DC converter and power management designs.
  • Ideal for load switching and battery protection.

BSC094N03S G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC094N03S G?

The maximum drain-source voltage (Vdss) is 30 V.

What is the maximum drain current of this MOSFET?

The maximum drain current is 14.6 A at ambient temperature (Ta) and 35 A at case temperature (Tc).

What is the on-resistance of the BSC094N03S G?

The maximum drain-source on-resistance (Rds On) is 9.4 mOhm at Id=35A and Vgs=10V.

What package does the BSC094N03S G come in?

It comes in an 8-PowerTDFN surface mount package, also known as PG-TDSON-8-1.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

Is the BSC094N03S G RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified data.

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