Mfr Part #:

BSC093N15NS5ATMA1

N-Channel power MOSFET from Infineon Technologies, rated for 150V drain-source voltage and 87A continuous drain current. Low on-resistance of 9.3mΩ in a PG-TDSON-8 surface mount package.

✓ Total Stock: 4,504 pcs

$ Price Range: $1.86 - $4.67

BSC093N15NS5ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	4,504 pcs On Request	4504 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSC093N15NS5ATMA1 Description

Short technical summary and product information.

The BSC093N15NS5ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 5 series, designed for high-efficiency power conversion. It features a maximum drain-source voltage of 150V and a continuous drain current of 87A at 25°C case temperature.

With a typical on-resistance of 9.3mΩ (max) at 10V gate drive, this MOSFET minimizes conduction losses. The gate charge is 40.7nC, enabling fast switching. The device is rated for pulsed drain current up to 348A and offers a single-pulse avalanche energy of 130mJ.

Housed in the PG-TDSON-8 package (8-pin surface mount), it has a maximum power dissipation of 139W at 25°C. The operating junction temperature range is -55°C to 150°C.

The device is RoHS compliant (Pb-free lead plating) and qualified according to JEDEC standards. Moisture sensitivity level is MSL 1 (unlimited).

BSC093N15NS5ATMA1 Quick Information

Product Type: N-Channel Power MOSFET

Series: OptiMOS 5

Canonical Name: Infineon Technologies BSC093N15NS5ATMA1 N-Channel MOSFET

Subcategory: Single MOSFETs

BSC093N15NS5ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BSC093N15NS5ATMA1 Estimated Pricing

Qty	Low	High
1+	$4.67	$4.67
10+	$3.04	$3.04
100+	$2.29	$2.29
500+	$1.99	$1.99
1,000+	$1.97	$1.97
2,500+	$1.86	$1.86
5,000+	$1.86	$1.86

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC093N15NS5ATMA1 Features

N-channel MOSFET with 150V drain-source voltage.
Continuous drain current up to 87A at 25°C.
Low on-resistance of 9.3mOhm typical.
OptiMOS 5 technology for high efficiency.
Surface mount PG-TDSON-8 package.

BSC093N15NS5ATMA1 Applications

High-frequency switching power supplies.
Synchronous rectification circuits.
DC-DC converters and voltage regulators.
Motor control and drive applications.

BSC093N15NS5ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vds) of the BSC093N15NS5ATMA1?

The maximum drain-source voltage is 150V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 87A at Tc=25°C, and 55A at Tc=100°C.

What is the on-resistance (Rds(on)) of this MOSFET?

The maximum on-resistance is 9.3mΩ at Id=44A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the BSC093N15NS5ATMA1 available in?

The device is housed in the PG-TDSON-8 surface mount package.

Is the BSC093N15NS5ATMA1 RoHS compliant?

Yes, the datasheet states it is RoHS compliant with Pb-free lead plating.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	87A (Tc)
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	40.7 nC
Input Capacitance (Ciss) (Max) @ Vds	3230 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	139 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	PG-TDSON-8-7
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.6 V