| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,333 pcs
|
37333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,651 pcs
|
1651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Infineon BSC093N15NS5 is a high-performance N-channel MOSFET from the OptiMOSTM 5 family, designed for 150V applications. It features a very low on-resistance of 9.3 mΩ (maximum) and a continuous drain current of up to 87A at 25°C.
This MOSFET is ideal for high-frequency switching and synchronous rectification applications. It offers excellent gate charge x RDS(on) product (FOM) and very low reverse recovery charge (Qrr) of 58 nC. The operating temperature range is -55°C to 150°C.
The BSC093N15NS5 is packaged in a PG-TDSON-8 surface-mount package. It is Pb-free and RoHS compliant, qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150V.
The package is PG-TDSON-8, a surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum continuous drain current is 87A at a case temperature of 25°C.
The maximum on-resistance is 9.3mΩ.
The avalanche energy is 130mJ at ID=50A and RGS=25Ω.
The gate-source voltage range is ±20V.
