| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,055 pcs
|
6055 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The BSC0925ND from Infineon Technologies is a dual N-channel OptiMOS™ Power-MOSFET designed for high-performance applications, particularly buck converters. It features optimized clean switching characteristics and is 100% avalanche tested.
Key electrical specifications include a drain-source breakdown voltage of 30V and a maximum continuous drain current of 40A at a gate-source voltage of 10V and case temperature of 25°C. The device exhibits a low on-state resistance (RDS(on)) of 5.6-7 mΩ at VGS=4.5V and ID=20A, and 4.2-5 mΩ at VGS=10V and ID=20A. Dynamic characteristics include input capacitance (Ciss) of 870-1157 pF and output capacitance (Coss) of 330-439 pF.
This MOSFET is housed in a PG-TISON-8 package. It is Pb-free and halogen-free, complying with RoHS and IEC61249-2-21 standards. The operating and storage temperature range is -55°C to 150°C. Superior thermal resistance is also a noted feature, with a junction-to-case thermal resistance (RthJC) of 4.2 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 40A at VGS=10V and TC=25°C.
The typical on-state resistance is 5.6 mΩ at VGS=4.5V and ID=20A, and 4.2 mΩ at VGS=10V and ID=20A.
The package type is PG-TISON-8.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The operating and storage temperature range is -55°C to 150°C.