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BSC0921NDIATMA1 This is a dual N-Channel MOSFET from Infineon Technologies, rated for 30V drain-source voltage and 17A (Q1) / 31A (Q2) continuous drain current. It comes in a PG-TISON-8 surface-mount package.
Mfr Part #:

BSC0921NDIATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
This is a dual N-Channel MOSFET from Infineon Technologies, rated for 30V drain-source voltage and 17A (Q1) / 31A (Q2) continuous drain current. It comes in a PG-TISON-8 surface-mount package.
Total Stock: 6,020 pcs
$ Price Range: $0.80 - $2.72

BSC0921NDIATMA1 Available from 1 distributor

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Non-Authorised
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6,020 pcs
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BSC0921NDIATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
drain_source_on_resistance (Typical/Maximum @ Id=20 A, Vgs=10 V)
drain_source_on_resistance (Typical/Maximum @ Id=20 A, Vgs=4.5 V)
input_capacitance (Maximum @ VDS=15 V, VGS=0 V)
thermal_resistance_junction_case (Maximum)

BSC0921NDIATMA1 Description

Short technical summary and product information.

The BSC0921NDIATMA1 is a dual N-channel MOSFET from Infineon Technologies, part of the OptiMOS family. It features an asymmetrical configuration with Q1 and Q2 optimized for high-performance buck converters. The device is rated for a drain-source voltage of 30V and continuous drain currents of 17A (Q1) and 31A (Q2) at TA=25°C with VGS=4.5V. Logic level gate drive (4.5V rated) enables direct interface with low-voltage controllers.

 

Electrical characteristics include low on-resistance: typical 3.9mΩ (Q1) and 1.2mΩ (Q2) at VGS=10V, with maximum values of 5.0mΩ and 1.6mΩ respectively. Gate threshold voltage is maximum 2V at ID=250µA. Input capacitance is 1025pF (Q1) and 3590pF (Q2) at VDS=15V. Gate charge is 8.9nC at VGS=4.5V. Thermal resistance junction-to-case is 4.5 K/W (Q1) and 1.7 K/W (Q2).

 

Packaged in a PG-TISON-8 surface-mount package, the device operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant and halogen-free according to IEC61249-2-21. Power dissipation is 1W at TA=25°C with minimum footprint. The device is designed for applications requiring high efficiency and compact layout.

BSC0921NDIATMA1 Quick Information

Product Type: Dual N-Channel MOSFET
Series: OptiMOS
Canonical Name: Dual N-Channel MOSFET, 30V, 17A/31A, PG-TISON-8
Subcategory: Dual N-Channel MOSFET

BSC0921NDIATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC0921NDIATMA1 Estimated Pricing

Qty Low High
1+ $2.72 $2.72
10+ $1.75 $1.75
100+ $1.19 $1.19
500+ $1.01 $1.01
1,000+ $0.89 $0.89
2,500+ $0.88 $0.88
5,000+ $0.80 $0.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC0921NDIATMA1 Features

  • Dual N-channel asymmetrical MOSFET configuration.
  • Logic level gate drive at 4.5V.
  • Low on-resistance: 3.9mΩ typ (Q1), 1.2mΩ typ (Q2).
  • 30V drain-source voltage rating.
  • RoHS3 compliant and halogen-free.

BSC0921NDIATMA1 Applications

  • Optimized for high performance buck converters.
  • Suitable for DC-DC power supply designs.
  • Used in computing and telecom applications.

BSC0921NDIATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

PG-TISON-8 surface mount package.

What is the operating temperature range?

-55°C to 150°C.

Is this component RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current for Q1 and Q2?

Q1: 17A, Q2: 31A at TA=25°C, VGS=4.5V.

What is the gate threshold voltage?

Maximum 2V at ID=250µA.

What is the on-resistance for Q1 at 10V?

Typical 3.9mΩ, maximum 5.0mΩ.

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