| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,800 pcs
|
25800 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The BSC0921NDI from Infineon Technologies is a dual N-channel MOSFET belonging to the OptiMOS™ family, optimized for high-performance buck converter applications. It offers a drain-source breakdown voltage of 30V and is rated for logic-level gate drive (4.5V).
Key electrical characteristics include a low typical gate threshold voltage of 1.6V for Q2 and 3.9V for Q1. The drain-source on-state resistance (Rds(on)) is as low as 1.6mΩ (typical) for Q2 and 3.9mΩ (typical) for Q1 at VGS=4.5V. Continuous drain current is rated up to 40A at TC=70°C with VGS=10V.
This device is supplied in a PG-TISON-8 surface-mount package. It is qualified according to JEDEC standards and is Pb-free with RoHS compliance and halogen-free construction.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 1.6V for Q2 and 3.9V for Q1.
The maximum Rds(on) is 7.0mΩ for Q1 and 2.1mΩ for Q2.
The maximum Rds(on) is 5.0mΩ for Q1 and 1.6mΩ for Q2.
The continuous drain current is rated up to 40A at TC=70°C with VGS=10V.
The BSC0921NDI is supplied in a PG-TISON-8 package.
Yes, the BSC0921NDI is RoHS3 Compliant.