BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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900 pcs
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900 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Tape & Reel |
The Infineon Technologies BSC0911NDATMA1 is a high-performance N-Channel MOSFET designed for power management applications. It offers a drain-source breakdown voltage of 25V and a continuous drain current capability of up to 40A.
Key electrical characteristics include a low drain-source on-resistance (Rds On) as low as 1.3 mOhms at 20A and 10V, and a gate charge (Qg) of 12nC at 4.5V drive, indicating efficient switching performance. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is housed in a compact 8-PowerTDFN (TSON-8) surface-mount package, suitable for space-constrained designs. Its OptiMOS? series designation highlights its advanced technology for power efficiency.
The BSC0911NDATMA1 is suitable for various applications requiring efficient power switching and control, such as in automotive electronics, industrial control, and power supplies.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 25V and the gate-source voltage is 20V.
The package is TSON-8 (8-PowerTDFN).
The operating temperature range is -55°C to 150°C.
The continuous drain current is 40A.
The maximum on-resistance is 3.2mOhm at 20A and 10V gate drive.
The typical gate threshold voltage is 1.6V, with a maximum of 2V at 250μA.
The input capacitance is 1600pF at 12V.