| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,200 pcs
|
23200 pcs | On Request | 1 | On Request | On Request | 16+PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The BSC0910NDI from Infineon Technologies is a Dual N-Channel OptiMOS™ MOSFET designed for high-performance buck converter applications. It features a 25V drain-source breakdown voltage and a continuous drain current rating of up to 40A at 70°C case temperature.
This MOSFET is optimized for efficiency, offering low on-state resistance (RDS(on)) values as low as 1.2 mΩ (typical for Q2 at VGS=10V). It supports logic-level gate drive (4.5V rated) and includes an integrated monolithic Schottky-like diode. The device is 100% avalanche tested and qualified according to JEDEC standards.
Packaged in a PG-TISON-8, the BSC0910NDI is suitable for surface mounting. It is Pb-free, RoHS compliant, and halogen-free, meeting stringent environmental requirements. The operating temperature range is -55°C to 150°C.
Key electrical characteristics include a gate threshold voltage of 1V (typical for Q1) and 2V (typical for Q2). Dynamic characteristics such as input capacitance (Ciss) range from 1000pF (Q1) to 4500pF (Q2), and output capacitance (Coss) ranges from 500pF (Q1) to 2300pF (Q2).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum 25 V.
PG-TISON-8.
-55 to 150 °C.
At TC=70°C and VGS=10V, both channels support 40 A.
Q1: 4.6 mΩ; Q2: 1.2 mΩ.
Q1: 1 V; Q2: 2 V.
2.5 W at TA=25°C.