BSC0910NDI The Infineon Technologies BSC0910NDI is a Dual N-Channel OptiMOS™ MOSFET. It offers a 25V breakdown voltage and a continuous drain current of up to 40A.
Mfr Part #:

BSC0910NDI

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC0910NDI is a Dual N-Channel OptiMOS™ MOSFET. It offers a 25V breakdown voltage and a continuous drain current of up to 40A.
✓ Total Stock: 23,200 pcs
$ Price Range: $2.40

BSC0910NDI Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
23,200 pcs
23200 pcs On Request 1 On Request On Request 16+PB On Request On Request

BSC0910NDI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
SVHC Present

BSC0910NDI Description

Short technical summary and product information.

The BSC0910NDI from Infineon Technologies is a Dual N-Channel OptiMOS™ MOSFET designed for high-performance buck converter applications. It features a 25V drain-source breakdown voltage and a continuous drain current rating of up to 40A at 70°C case temperature.

 

This MOSFET is optimized for efficiency, offering low on-state resistance (RDS(on)) values as low as 1.2 mΩ (typical for Q2 at VGS=10V). It supports logic-level gate drive (4.5V rated) and includes an integrated monolithic Schottky-like diode. The device is 100% avalanche tested and qualified according to JEDEC standards.

 

Packaged in a PG-TISON-8, the BSC0910NDI is suitable for surface mounting. It is Pb-free, RoHS compliant, and halogen-free, meeting stringent environmental requirements. The operating temperature range is -55°C to 150°C.

 

Key electrical characteristics include a gate threshold voltage of 1V (typical for Q1) and 2V (typical for Q2). Dynamic characteristics such as input capacitance (Ciss) range from 1000pF (Q1) to 4500pF (Q2), and output capacitance (Coss) ranges from 500pF (Q1) to 2300pF (Q2).

BSC0910NDI Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel OptiMOS™ MOSFET
Subcategory: N-Channel

BSC0910NDI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

BSC0910NDI Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC0910NDI Features

  • Dual N-channel OptiMOS™ MOSFET.
  • Optimized for high performance Buck converter.
  • Logic level gate drive (4.5V rated).
  • Low on-state resistance (RDS(on)).
  • Pb-free and Halogen-free.

BSC0910NDI Applications

  • Two channels enable half-bridge topologies.
  • Low conduction loss from low RDS(on).
  • Fast switching supports high-frequency designs.
  • Suitable for low-voltage power switching.

BSC0910NDI FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the BSC0910NDI?

Minimum 25 V.

What package is the BSC0910NDI available in?

PG-TISON-8.

What is the operating and storage temperature range?

-55 to 150 °C.

What is the maximum continuous drain current?

At TC=70°C and VGS=10V, both channels support 40 A.

What are the maximum on-state resistances for Q1 and Q2 at VGS=10V?

Q1: 4.6 mΩ; Q2: 1.2 mΩ.

What are the typical gate threshold voltages for Q1 and Q2?

Q1: 1 V; Q2: 2 V.

What is the maximum power dissipation?

2.5 W at TA=25°C.

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