| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,490 pcs
|
23490 pcs | On Request | 1 | On Request | On Request | 09+Rohs | On Request | On Request | |
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC090N03MSG is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for power switching applications, offering a maximum drain-source voltage of 30V and a maximum drain current of 48A at case temperature (Tc). The device features a low on-resistance of 9mOhm at 30A and 10V gate drive, which helps minimize conduction losses.
This MOSFET has a gate charge of 24nC at 10V and an input capacitance of 1900pF at 15V, making it suitable for high-frequency switching. The maximum gate threshold voltage is 2V at 250µA, and the gate-source voltage rating is ±20V. It can dissipate up to 32W at case temperature, with an operating junction temperature range of -55°C to 150°C.
The BSC090N03MSG is housed in an 8-PowerTDFN package (supplier device package PG-TDSON-8-5) and is designed for surface-mount assembly. This compact package is suitable for space-constrained PCB layouts in power management and DC-DC conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum drain current is 12A at ambient temperature (Ta) and 48A at case temperature (Tc).
The maximum on-resistance is 9mOhm at a drain current of 30A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The package is 8-PowerTDFN, with supplier device package PG-TDSON-8-5.
The maximum gate threshold voltage is 2V at a drain current of 250µA.
The maximum power dissipation is 2.5W at ambient temperature (Ta) and 32W at case temperature (Tc).