| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC090N03MS is an N-channel Power MOSFET from the OptiMOS™3 M-Series, optimized for 5V driver applications such as Notebook, VGA, and POL. It features a low on-resistance (RDS(on)) of 9 mΩ typical at VGS=10 V and 11.2 mΩ typical at VGS=4.5 V, along with a drain-source breakdown voltage of 30 V.
This MOSFET boasts excellent gate charge x R DS(on) product (FOM) for high-frequency SMPS. It is 100% avalanche tested and qualified according to JEDEC standards for target applications. The device offers superior thermal resistance and comes in a PG-TDSON-8 package, suitable for surface mounting.
Key electrical characteristics include a continuous drain current of up to 48 A at TC=25 °C (VGS=10 V) and a pulsed drain current of 192 A. Dynamic characteristics such as input capacitance (Ciss) are typically 1400 pF, and output capacitance (Coss) is typically 470 pF. The operating and storage temperature range is -55 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The typical on-resistance at VGS=4.5V and ID=30A is 9 mΩ.
The maximum continuous drain current is 48 A when VGS=10 V and TC=25 °C.
The package type is PG-TDSON-8.
Yes, the RoHS status is Compliant.
The Moisture Sensitivity Level is 1.
The operating and storage temperature range is -55 °C to 150 °C.