BSC0909NS

The BSC0909NS is an N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. This component is engineered for efficient power switching with a drain-source breakdown voltage of 34V and a gate threshold voltage ranging from 1.2V to 2V. The device supports a continuous drain current of up to 44A at a case temperature of 25°C, dropping to 28A at 100°C, ensuring reliable performance across varying thermal conditions. A pulsed drain current capability of 176A allows it to handle transient loads effectively.

Thermal management is supported by a maximum power dissipation rating of 27W at 25°C case temperature and a junction-to-case thermal resistance of 4.6K/W. The operating and storage temperature range spans from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. The gate-source voltage is rated at ±20V, providing robust protection against overvoltage events on the control terminal.

Packaged in a space-saving PG-TDSON-8 footprint, this MOSFET facilitates surface-mount assembly on printed circuit boards. The marking code 0909NS identifies the unit for traceability. Its low on-state resistance of 11.8mΩ at VGS=4.5V minimizes conduction losses during operation. Designers can utilize this component in DC-DC converters, motor drivers, and load switch circuits where compact size and high current handling are required.