BSC0906NSATMA1 N-Channel MOSFET from Infineon's OptiMOS series, rated for 30V drain-source voltage and 63A continuous drain current. Features low on-resistance of 4.5mOhm and is housed in a PG-TDSON-8-6 surface-mount package.
Mfr Part #:

BSC0906NSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon's OptiMOS series, rated for 30V drain-source voltage and 63A continuous drain current. Features low on-resistance of 4.5mOhm and is housed in a PG-TDSON-8-6 surface-mount package.
✓ Total Stock: 21,020 pcs
$ Price Range: $0.23 - $1.11

BSC0906NSATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC0906NSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC0906NSATMA1 Description

Short technical summary and product information.

The BSC0906NSATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS family, designed for high-performance power conversion. It features a maximum drain-source voltage of 30V and a continuous drain current of 63A at case temperature (Tc=25°C) or 18A at ambient temperature (Ta=25°C). The device offers a low typical on-resistance of 4.5mOhm at Vgs=10V, enabling high efficiency in switching applications.

 

Key electrical characteristics include a gate charge of 13nC (max at Vgs=10V) and input capacitance of 870pF (max at Vds=15V), which contribute to fast switching performance. The MOSFET is avalanche rated with a single pulse avalanche current of 35A and energy of 14mJ, ensuring robustness in inductive load switching. The operating junction temperature range is -55°C to 150°C.

 

The device is housed in a PG-TDSON-8-6 (8-PowerTDFN) surface-mount package, offering excellent thermal performance with a maximum power dissipation of 30W at case temperature. It is optimized for high-performance buck converters and clean switching applications. The BSC0906NSATMA1 is RoHS compliant and halogen-free according to IEC61249-2-21.

BSC0906NSATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon BSC0906NSATMA1 N-Channel OptiMOS MOSFET
Subcategory: N-Channel

BSC0906NSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

BSC0906NSATMA1 Estimated Pricing

Qty Low High
1+ $1.11 $1.11
10+ $0.69 $0.69
50+ $0.51 $0.51
100+ $0.45 $0.45
500+ $0.35 $0.35
5,000+ $0.26 $0.26
15,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC0906NSATMA1 Features

  • N-channel OptiMOS MOSFET with 30V drain-source voltage.
  • Continuous drain current up to 63A at case temperature.
  • Low on-resistance of 4.5mOhm typical.
  • Avalanche rated for robust operation.
  • Surface-mount TDSON-8 package.

BSC0906NSATMA1 Applications

  • Optimized for high-performance buck converters.
  • Suitable for clean switching applications.
  • Used in power management circuits.
  • Ideal for DC-DC converters.

BSC0906NSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What package is the BSC0906NSATMA1 available in?

PG-TDSON-8-6 (8-PowerTDFN) surface-mount package.

What is the operating temperature range?

-55°C to 150°C.

Is the BSC0906NSATMA1 RoHS compliant?

Yes, RoHS compliant and halogen-free per datasheet.

What is the on-resistance?

4.5mOhm maximum at Vgs=10V, Id=30A.

What is the gate charge?

13nC maximum at Vgs=10V.

What is the continuous drain current?

63A at Tc=25°C, 18A at Ta=25°C.

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