BSC0902NSIATMA1 Infineon BSC0902NSIATMA1 is an N-Channel OptiMOS power MOSFET with 30V drain-source voltage and 100A continuous drain current.
Mfr Part #:

BSC0902NSIATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSC0902NSIATMA1 is an N-Channel OptiMOS power MOSFET with 30V drain-source voltage and 100A continuous drain current.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.29 - $1.34

BSC0902NSIATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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6,020 pcs
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BSC0902NSIATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC0902NSIATMA1 Description

Short technical summary and product information.

The Infineon BSC0902NSIATMA1 is an N-Channel enhancement mode power MOSFET from the OptiMOS family, designed for high-performance DC-DC conversion. It features a very low on-resistance of 2.8 mΩ maximum at 10V gate drive, enabling high efficiency in synchronous buck converter topologies.

 

The device is rated for a maximum drain-source voltage of 30V and a continuous drain current of 100A at case temperature 25°C. It is avalanche tested with a maximum avalanche energy of 30 mJ and a pulsed drain current capability of 400A. The MOSFET integrates a monolithic Schottky-like diode for improved switching performance.

 

The BSC0902NSIATMA1 is housed in a PG-TDSON-8 (SuperSO8) surface mount package, offering superior thermal resistance. It is qualified according to JEDEC standards and is RoHS compliant with halogen-free materials.

BSC0902NSIATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies BSC0902NSI N-Channel OptiMOS Power MOSFET
Subcategory: Single N-Channel

BSC0902NSIATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

BSC0902NSIATMA1 Estimated Pricing

Qty Low High
1+ $1.34 $1.34
10+ $0.84 $0.84
50+ $0.63 $0.63
100+ $0.56 $0.56
500+ $0.43 $0.43
5,000+ $0.32 $0.32
15,000+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC0902NSIATMA1 Features

  • N-Channel OptiMOS power MOSFET design.
  • Very low 2.8 mΩ on-resistance at 10V.
  • Rated for 30V drain-source voltage.
  • 100A continuous drain current capability.
  • Integrated monolithic Schottky-like diode.

BSC0902NSIATMA1 Applications

  • High performance synchronous buck converters.
  • DC-DC power conversion applications.
  • Optimized SyncFET for buck converters.

BSC0902NSIATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC0902NSIATMA1?

The maximum drain-source voltage (Vdss) is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100 A at Tc=25°C and 23 A at Ta=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds on) is 2.8 mΩ at Id=30A and Vgs=10V.

What package is the BSC0902NSIATMA1 available in?

It is available in a PG-TDSON-8 (SuperSO8) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSC0902NSIATMA1 RoHS compliant?

Yes, the datasheet states it is Pb-free lead plating and RoHS compliant.

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