| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC0902NSATMA1 is an N-Channel MOSFET from Infineon Technologies. It is designed for power switching applications requiring high efficiency and compact size. The device features a drain-source breakdown voltage of 30V and supports continuous drain currents of 24A at 25°C ambient temperature and 100A at 25°C case temperature.
The MOSFET has a maximum drain-source on-resistance of 2.6mΩ at a gate-source voltage of 10V and drain current of 30A. The gate threshold voltage is 2.2V maximum at 250µA drain current. Total gate charge is 26nC at 10V gate drive, and input capacitance is 1700pF at 15V drain-source voltage. The gate-source voltage rating is ±20V, supporting drive levels of 4.5V and 10V for various control circuits.
Power dissipation is rated at 2.5W at 25°C ambient and 48W at 25°C case temperature. The device operates over a junction temperature range of -55°C to 150°C. It is supplied in a surface-mount 8-PowerTDFN package (supplier package designation PG-TDSON-8-6), which provides a low-thermal-resistance path for effective heat management in high-current designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.47 | $1.47 |
| 10+ | $0.93 | $0.93 |
| 100+ | $0.61 | $0.61 |
| 500+ | $0.48 | $0.48 |
| 1,000+ | $0.40 | $0.40 |
| 5,000+ | $0.36 | $0.36 |
| 10,000+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V (maximum).
It is offered in an 8-PowerTDFN surface-mount package (supplier package PG-TDSON-8-6).
The junction temperature range is -55°C to 150°C.
The existing data lists it as RoHS compliant, though the information is unverified and carries low confidence.
It is 24A at 25°C ambient temperature and 100A at 25°C case temperature.
The maximum on-resistance is 2.6mΩ at Id = 30A and Vgs = 10V.
The gate threshold voltage is 2.2V maximum at Id = 250µA.