| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC0901NSIATMA1 is an N-Channel MOSFET from Infineon Technologies, designed for power management applications. It features a drain-source voltage rating of 30V and a continuous drain current of 28A at ambient temperature (Ta) and 100A at case temperature (Tc). The device offers a low on-resistance of 2mOhm maximum at 30A gate drive of 10V. Gate charge is 20nC at 15V, and input capacitance is 2600pF at 15V. The MOSFET is housed in an 8-PowerTDFN package (PG-TDSON-8-6) for surface mount assembly. Operating temperature range is -55°C to 150°C. Maximum power dissipation is 2.5W at ambient and 69W at case. This component is suitable for switching and load control in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
| 10+ | $1.06 | $1.06 |
| 100+ | $0.71 | $0.71 |
| 500+ | $0.56 | $0.56 |
| 1,000+ | $0.51 | $0.51 |
| 2,000+ | $0.50 | $0.50 |
| 5,000+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction).
8-PowerTDFN (PG-TDSON-8-6).
RoHS3 Compliant (unverified).
30V.
28A at ambient temperature (Ta) and 100A at case temperature (Tc).
2mOhm maximum at 30A drain current and 10V gate drive.
2.2V maximum at 250µA drain current.